Dual N-channel logic level FET in SOIC 8-pin package (SOT-96-1). Features 30V drain-source breakdown voltage and 30mΩ drain-source resistance. Continuous drain current up to 6.3A with a maximum power dissipation of 2W. Operates across a wide temperature range of -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 5ns and fall time of 11ns.
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NXP PHN203,518 technical specifications.
| Package/Case | SOT-96-1 |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 560pF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | 30V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 5ns |
| RoHS | Compliant |
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