Dual N-channel logic level FET in SOIC 8-pin package (SOT-96-1). Features 30V drain-source breakdown voltage and 30mΩ drain-source resistance. Continuous drain current up to 6.3A with a maximum power dissipation of 2W. Operates across a wide temperature range of -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 5ns and fall time of 11ns.
PackageSOT-96-1
PolarityN-CHANNEL
Power2W
Quick Jump:
Technical Specifications
NXP PHN203,518 technical specifications.
General
Package/Case
SOT-96-1
Continuous Drain Current (ID)
6.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
30V
Fall Time
11ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
560pF
Max Dual Supply Voltage
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
30mR
RoHS Compliant
Yes
Series
30V
Turn-Off Delay Time
21ns
Turn-On Delay Time
5ns
Compliance
RoHS
Compliant
Datasheet
NXP PHN203,518 Datasheet
Download the complete datasheet for NXP PHN203,518 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
