The PHP101NQ03LT,127 is a N-CHANNEL TrenchMOS MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 75A and a drain to source breakdown voltage of 30V. The device has a drain to source resistance of 5.5mR and a maximum power dissipation of 166W. It is packaged in a TO-220AB package and is mounted through a hole. The device is RoHS compliant and is not radiation hardened.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power166W
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Technical Specifications
NXP PHP101NQ03LT,127 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.18nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 166W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 166W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHP101NQ03LT,127 Datasheet
Download the complete datasheet for NXP PHP101NQ03LT,127 to view detailed technical specifications.
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