
The PHP160NQ08T is a 75V N-CHANNEL MOSFET with a continuous drain current of 75A and a power dissipation of 300W. It is packaged in a TO-220AB package and is lead free and RoHS compliant. The device operates over a temperature range of -55°C to 175°C and has a gate to source voltage of 20V. The MOSFET has a drain to source resistance of 5.6mR and a fall time of 48ns.
NXP PHP160NQ08T technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.59nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 128ns |
| DC Rated Voltage | 75V |
| RoHS | Compliant |
Download the complete datasheet for NXP PHP160NQ08T to view detailed technical specifications.
No datasheet is available for this part.
