
N-CHANNEL MOSFET with 75V Drain to Source Breakdown Voltage and 75A Continuous Drain Current. Features low 27mR Drain to Source Resistance and 157W Max Power Dissipation. Operates from -55°C to 175°C, with fast switching times including 18ns Turn-On Delay and 26ns Fall Time. Packaged in TO-220AB for through-hole mounting, this RoHS compliant component is ideal for power applications.
NXP PHP75NQ08T technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 1.985nF |
| Lead Free | Lead Free |
| Length | 10.3mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 157W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 157W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 75V |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PHP75NQ08T to view detailed technical specifications.
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