The PHP75NQ08T,127 is a 75V N-Channel TrenchMOS MOSFET with a maximum continuous drain current of 75A. It features a drain to source breakdown voltage of 75V and a drain to source resistance of 27mR. The device is packaged in a TO-220AB package and is suitable for through hole mounting. The MOSFET operates over a temperature range of -55°C to 175°C and is RoHS compliant.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power157W
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Technical Specifications
NXP PHP75NQ08T,127 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.985nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 157W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 157W |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHP75NQ08T,127 Datasheet
Download the complete datasheet for NXP PHP75NQ08T,127 to view detailed technical specifications.
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