N-channel MOSFET in SOT-223 package, featuring 55V drain-source breakdown voltage and 10.7A continuous drain current. Offers low 40mΩ drain-to-source resistance (Rds On Max) and 1.8W power dissipation. Designed for surface mounting with a compact 6.7mm x 3.7mm x 1.8mm profile. Includes fast switching characteristics with 17ns turn-on delay and 65ns fall time. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
NXP PHT11N06LT,135 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 10.7A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 13V |
| Height | 1.8mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 17ns |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHT11N06LT,135 Datasheet
Download the complete datasheet for NXP PHT11N06LT,135 to view detailed technical specifications.
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