N-channel power MOSFET in SOT package, featuring 55V drain-source breakdown voltage and 150mΩ maximum drain-source on-resistance. This component offers a continuous drain current of 5.5A and a maximum power dissipation of 8.3W. Operating across a temperature range of -55°C to 150°C, it exhibits typical switching times with a turn-on delay of 4.9ns and a fall time of 4.5ns. Packaged on tape and reel, this lead-free MOSFET is designed for efficient power switching applications.
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NXP PHT6N06T135 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 150MR |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.3W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 7.8ns |
| Turn-On Delay Time | 4.9ns |
| RoHS | Compliant |
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