The PHU101NQ03LT,127 is a 30V N-CHANNEL TrenchMOS MOSFET with a maximum continuous drain current of 75A and a maximum drain to source resistance of 5.5mR. It features a TO-251-3 package and is designed for through hole mounting. The device operates over a temperature range of -55°C to 175°C and is RoHS compliant. The MOSFET has a maximum power dissipation of 166W and a turn-off delay time of 37ns.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power166W
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Technical Specifications
NXP PHU101NQ03LT,127 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.18nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 166W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 166W |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 37ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHU101NQ03LT,127 Datasheet
Download the complete datasheet for NXP PHU101NQ03LT,127 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.