The PHX9NQ20T is a N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5.2A and a drain to source breakdown voltage of 200V. The device has a drain to source resistance of 400mR and a power dissipation of 25W. It is packaged in a rail/tube format and is lead free and RoHS compliant.
Current Rating5.2A
PolarityN-CHANNEL
Power25W
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Technical Specifications
NXP PHX9NQ20T technical specifications.
General
| Continuous Drain Current (ID) | 5.2A |
| Current Rating | 5.2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 959pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHX9NQ20T Datasheet
Download the complete datasheet for NXP PHX9NQ20T to view detailed technical specifications.
No datasheet is available for this part.