N-channel JFET transistor in a TO-236AB surface mount package. Features a 25V drain-source breakdown voltage and 10mA continuous drain current. Offers a low drain-source on-resistance of 18 Ohms. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 250mW. Input capacitance is 30pF.
PackageTO-236AB
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
NXP PMBFJ110,215 technical specifications.
General
| Package/Case | TO-236AB |
| Continuous Drain Current (ID) | 10mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 18R |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | -25V |
| Height | 1mm |
| Input Capacitance | 30pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMBFJ110,215 Datasheet
Download the complete datasheet for NXP PMBFJ110,215 to view detailed technical specifications.
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