The PMBT2907A is a PNP bipolar junction transistor with a collector base voltage rating of -60V and a collector emitter breakdown voltage of 60V. It has a collector emitter saturation voltage of -400mV and a collector emitter voltage of 1.6V. The transistor is available in a SOT-23 package and is suitable for surface mount technology. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 250mW. The PMBT2907A is compliant with RoHS and SVHC regulations.
PackageSOT-23
Voltage60V
PolarityPNP
Power250mW
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Technical Specifications
NXP PMBT2907A technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 1.6V |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 1.1mm |
| hFE Min | 100 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMBT2907A Datasheet
Download the complete datasheet for NXP PMBT2907A to view detailed technical specifications.
No datasheet is available for this part.