The PMBTA06/T3 is a NPN transistor with a collector-emitter saturation voltage of 250mV and a gain bandwidth product of 100MHz. It has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. The transistor is packaged in a SOT-23 package and is lead free. It is RoHS compliant and has a maximum power dissipation of 250mW.
PackageSOT-23
Current Rating500mA
PolarityNPN
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Technical Specifications
NXP PMBTA06/T3 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 80V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMBTA06/T3 Datasheet
Download the complete datasheet for NXP PMBTA06/T3 to view detailed technical specifications.
No datasheet is available for this part.