The PMDPB95XNE115 is a 2 N-Channel MOSFET with a maximum drain to source breakdown voltage of 30V and a continuous drain current of 3.1A. It has a maximum power dissipation of 475mW and a maximum operating temperature of 150°C. The device is packaged in a SOT package and is available in quantities of 3000 per reel. The PMDPB95XNE115 is suitable for use in a variety of applications, including power management and switching circuits.
NXP PMDPB95XNE115 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 1V |
| Input Capacitance | 143pF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 475mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 120mR |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6ns |
| RoHS | Compliant |
No datasheet is available for this part.
