This silicon rectifier diode features a maximum operating temperature of 150 degrees Celsius. It has a dual terminal configuration with 2 pins. The diode element is made of silicon and is a type of rectifier diode. The maximum reverse voltage is 10 volts and the maximum power dissipation is 0.83 watts.
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Technical Specifications
NXP PMEG1020EH,115 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 10 |
| Power Dissipation-Max | 0.83 |
Compliance
| RoHS | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP PMEG1020EH,115 Datasheet
Download the complete datasheet for NXP PMEG1020EH,115 to view detailed technical specifications.
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