Ultra-low forward voltage (VF) Schottky barrier rectifier diode, ideal for general-purpose rectification. Features a maximum repetitive peak reverse voltage of 60V and a maximum continuous forward current of 1A. This 2-terminal, dual-pin component is constructed with silicon and offers a maximum power dissipation of 0.35W. Designed for operation up to a maximum ambient temperature of 150°C.
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Technical Specifications
NXP PMEG6010CEJ,115 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 60 |
| Power Dissipation-Max | 0.35 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP PMEG6010CEJ,115 Datasheet
Download the complete datasheet for NXP PMEG6010CEJ,115 to view detailed technical specifications.
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