Ultra-low forward voltage (VF) Schottky barrier rectifier diode, ideal for general-purpose rectification. Features a maximum repetitive peak reverse voltage of 60V and a maximum continuous forward current of 1A. This 2-terminal, dual-pin component is constructed with silicon and offers a maximum power dissipation of 0.35W. Designed for operation up to a maximum ambient temperature of 150°C.
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Technical Specifications
NXP PMEG6010CEJ,115 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
60
Power Dissipation-Max
0.35
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
Compliant
Military Spec
False
Datasheet
NXP PMEG6010CEJ,115 Datasheet
Download the complete datasheet for NXP PMEG6010CEJ,115 to view detailed technical specifications.
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