The PMEM4020APD,115 is a PNP bipolar junction transistor with a collector base voltage rating of 40V and a maximum collector current of 750mA. It has a gain bandwidth product of 150MHz and a maximum power dissipation of 500mW. The transistor is packaged in a TSOP package and is suitable for surface mount applications. It operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations.
PackageTSOP
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PMEM4020APD,115 technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 530mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Max Collector Current | 750mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMEM4020APD,115 Datasheet
Download the complete datasheet for NXP PMEM4020APD,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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