N-channel TrenchMOS ultra low level FET in a 3-pin SC-70 package. Features 20V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 1.02A. Offers a low Drain-source On Resistance (Rds On) of 340mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 560mW. Includes fast switching characteristics with turn-on delay time of 4.5ns and fall time of 10ns.
PackageSOT
PolarityN-CHANNEL
Power560mW
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Technical Specifications
NXP PMF280UN,115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 1.02A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 340mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 340MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 45pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 560mW |
| Radiation Hardening | No |
| Rds On Max | 340mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 18.5ns |
| Turn-On Delay Time | 4.5ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMF280UN,115 Datasheet
Download the complete datasheet for NXP PMF280UN,115 to view detailed technical specifications.
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