N-channel TrenchMOS ultra low level FET in a 3-pin SC-70 package. Features 20V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 1.02A. Offers a low Drain-source On Resistance (Rds On) of 340mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 560mW. Includes fast switching characteristics with turn-on delay time of 4.5ns and fall time of 10ns.
PackageSOT
PolarityN-CHANNEL
Power560mW
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Technical Specifications
NXP PMF280UN,115 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
1.02A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
340mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
340MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
45pF
Lead Free
Lead Free
Length
2.2mm
Max Dual Supply Voltage
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
560mW
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
560mW
Radiation Hardening
No
Rds On Max
340mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchMOS™
Threshold Voltage
700mV
Turn-Off Delay Time
18.5ns
Turn-On Delay Time
4.5ns
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
NXP PMF280UN,115 Datasheet
Download the complete datasheet for NXP PMF280UN,115 to view detailed technical specifications.
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