N-channel MOSFET featuring 20V drain-source breakdown voltage and 1A continuous drain current. This surface-mount component offers a maximum drain-source on-resistance of 350mR at a nominal gate-source voltage of 1V. With a fast 5ns turn-on delay and 11ns fall time, it operates within a temperature range of -55°C to 150°C. The device is housed in a compact SC package, measuring 2.2mm x 1.35mm x 1mm, and is RoHS compliant.
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NXP PMF290XN,115 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 350MR |
| Dual Supply Voltage | 20V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 34pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560mW |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 560mW |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 5ns |
| Width | 1.35mm |
| RoHS | Compliant |
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