The PMF3800SN115 is a N-CHANNEL TrenchMOS MOSFET with a maximum drain to source breakdown voltage of 60V and a continuous drain current of 260mA. It has a maximum power dissipation of 560mW and operates over a temperature range of -55°C to 150°C. The device is packaged in a lead-free SOT package and is suitable for use in a variety of applications.
PackageSOT
PolarityN-CHANNEL
Power560mW
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Technical Specifications
NXP PMF3800SN115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 260mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 4.5MR |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 560mW |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| Series | TrenchMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMF3800SN115 Datasheet
Download the complete datasheet for NXP PMF3800SN115 to view detailed technical specifications.
No datasheet is available for this part.