N-channel MOSFET transistor, featuring a 30V drain-source breakdown voltage and 125mA continuous drain current. This surface-mount component offers an 8 Ohm drain-source resistance and operates with a 15V gate-source voltage. Designed with two N-channel FETs in a 6-pin TSSOP package, it boasts fast switching speeds with a 7ns fall time, 10ns turn-on delay, and 15ns turn-off delay. Maximum power dissipation is 200mW, with an operating temperature range of -55°C to 150°C.
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NXP PMGD8000LN115 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 125mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 1mm |
| Input Capacitance | 18.5pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Rds On Max | 8R |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Width | 1.35mm |
| RoHS | Compliant |
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