N-channel MOSFET, 20V drain-source voltage, 6.3A continuous drain current. Features 28mΩ drain-source resistance at nominal Vgs, 700mV threshold voltage, and 1.75W maximum power dissipation. Packaged in a 6-pin TSOP for surface mounting, with dimensions of 3.1mm length, 1.7mm width, and 1mm height. Operates from -55°C to 150°C, with fast switching times including 8.5ns turn-on and 55ns turn-off delays. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.75W
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Technical Specifications
NXP PMN23UN,135 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
6.3A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Fall Time
14.5ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
740pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.75W
Mount
Surface Mount
Nominal Vgs
700mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.75W
Radiation Hardening
No
Rds On Max
28mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchMOS™
Termination
SMD/SMT
Threshold Voltage
700mV
Turn-Off Delay Time
55ns
Turn-On Delay Time
8.5ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
NXP PMN23UN,135 Datasheet
Download the complete datasheet for NXP PMN23UN,135 to view detailed technical specifications.
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