N-channel MOSFET for surface mount applications, featuring a 20V drain-source breakdown voltage and 5.7A continuous drain current. Offers a low 34mΩ drain-source on-resistance at a nominal gate-source voltage of 700mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.75W. Packaged in a compact 6-pin TSOP with dimensions of 3.1mm (L) x 1.7mm (W) x 1mm (H). Includes fast switching characteristics with turn-on delay of 8.5ns and fall time of 14.5ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP PMN27UN135 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP PMN27UN135 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 14.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 8.5ns |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PMN27UN135 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
