N-channel MOSFET for surface mount applications, featuring a 20V drain-source breakdown voltage and 5.7A continuous drain current. Offers a low 34mΩ drain-source on-resistance at a nominal gate-source voltage of 700mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.75W. Packaged in a compact 6-pin TSOP with dimensions of 3.1mm (L) x 1.7mm (W) x 1mm (H). Includes fast switching characteristics with turn-on delay of 8.5ns and fall time of 14.5ns.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.75W
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Technical Specifications
NXP PMN27UN135 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
5.7A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Fall Time
14.5ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
740pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.75W
Mount
Surface Mount
Nominal Vgs
700mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.75W
Radiation Hardening
No
Rds On Max
34mR
Reach SVHC Compliant
No
Series
TrenchMOS™
Termination
SMD/SMT
Turn-Off Delay Time
55ns
Turn-On Delay Time
8.5ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
NXP PMN27UN135 Datasheet
Download the complete datasheet for NXP PMN27UN135 to view detailed technical specifications.
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