N-channel MOSFET for surface mount applications, featuring a 20V drain-source breakdown voltage and 5.7A continuous drain current. Offers a low 34mΩ drain-source on-resistance at a nominal gate-source voltage of 700mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.75W. Packaged in a compact 6-pin TSOP with dimensions of 3.1mm (L) x 1.7mm (W) x 1mm (H). Includes fast switching characteristics with turn-on delay of 8.5ns and fall time of 14.5ns.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.75W
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Technical Specifications
NXP PMN27UN135 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 14.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 8.5ns |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMN27UN135 Datasheet
Download the complete datasheet for NXP PMN27UN135 to view detailed technical specifications.
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