The PMN28UN,165 is an N-CHANNEL TrenchMOS MOSFET with a maximum continuous drain current of 5.7A and a drain to source breakdown voltage of 12V. It features a maximum drain to source resistance of 34mR and a maximum power dissipation of 1.75W. The device is packaged in a SOT package and is available in quantities of 10000 on tape and reel. The PMN28UN,165 operates over a temperature range of -55°C to 150°C and is RoHS compliant.
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NXP PMN28UN,165 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 740pF |
| Max Dual Supply Voltage | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
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