N-channel MOSFET featuring 30V drain-source breakdown voltage and 4.9A continuous drain current. Surface mountable in a 6-pin TSOP package, this component offers a low 46mΩ drain-source on-resistance. Key specifications include 10ns turn-on delay, 50ns turn-off delay, and 12ns fall time, with a maximum power dissipation of 1.75W. Operating temperature range spans -55°C to 150°C, and it is RoHS compliant.
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NXP PMN34UN,135 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 46MR |
| Dual Supply Voltage | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Rds On Max | 46mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Width | 1.7mm |
| RoHS | Compliant |
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