N-channel MOSFET featuring 30V drain-source breakdown voltage and 4.9A continuous drain current. Surface mountable in a 6-pin TSOP package, this component offers a low 46mΩ drain-source on-resistance. Key specifications include 10ns turn-on delay, 50ns turn-off delay, and 12ns fall time, with a maximum power dissipation of 1.75W. Operating temperature range spans -55°C to 150°C, and it is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.75W
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Technical Specifications
NXP PMN34UN,135 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
4.9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
46mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
46MR
Dual Supply Voltage
30V
Fall Time
12ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
790pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.75W
Mount
Surface Mount
Nominal Vgs
700mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.75W
Radiation Hardening
No
Rds On Max
46mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchMOS™
Termination
SMD/SMT
Turn-Off Delay Time
50ns
Turn-On Delay Time
10ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
NXP PMN34UN,135 Datasheet
Download the complete datasheet for NXP PMN34UN,135 to view detailed technical specifications.
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