The PMN45EN,165 is a 30V N-CHANNEL TrenchMOS MOSFET with a maximum continuous drain current of 5.2A and a maximum drain to source resistance of 40mR. It has a maximum operating temperature range of -55°C to 150°C and is packaged in a SOT package. The device is RoHS compliant and has a maximum power dissipation of 1.75W.
PackageSOT
PolarityN-CHANNEL
Power1.75W
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Technical Specifications
NXP PMN45EN,165 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 495pF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMN45EN,165 Datasheet
Download the complete datasheet for NXP PMN45EN,165 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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