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Technical Specifications
NXP PMN45EN,165 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
30V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
495pF
Max Dual Supply Voltage
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.75W
Package Quantity
10000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.75W
Radiation Hardening
No
Rds On Max
40mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
28ns
Turn-On Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
NXP PMN45EN,165 Datasheet
Download the complete datasheet for NXP PMN45EN,165 to view detailed technical specifications.
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