The PMR290XN115 is an N-Channel TrenchMOS MOSFET with a maximum drain-to-source breakdown voltage of 20V and a continuous drain current of 970mA. It has a maximum power dissipation of 530mW and is packaged in a SC package. The device operates over a temperature range of -55°C to 150°C and is lead-free. It is a surface-mount device with a tape and reel packaging.
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NXP PMR290XN115 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 970mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 34pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 530mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 530mW |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 5ns |
| RoHS | Compliant |
Download the complete datasheet for NXP PMR290XN115 to view detailed technical specifications.
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