N-channel MOSFET in SOT-416 surface mount package. Features 30V drain-source breakdown voltage and 840mA continuous drain current. Offers low 440mΩ drain-source resistance at 10V Vgs. Includes fast switching times with 6.5ns turn-on and 9.5ns fall times. Operates from -55°C to 150°C with 530mW power dissipation.
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NXP PMR370XN,115 technical specifications.
| Package/Case | SOT-416 |
| Continuous Drain Current (ID) | 840mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.85mm |
| Input Capacitance | 37pF |
| Lead Free | Lead Free |
| Length | 1.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 530mW |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 530mW |
| Radiation Hardening | No |
| Rds On Max | 440mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 6.5ns |
| Width | 0.9mm |
| RoHS | Compliant |
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