N-channel MOSFET featuring TrenchMOS™ technology, designed for efficient switching. Offers a 30V drain-source breakdown voltage and a continuous drain current of 800mA. Features low on-resistance (Rds On Max) of 480mR at a gate-source voltage of 8V. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SC case (1.8mm L x 0.9mm W x 0.85mm H) on tape and reel.
PackageSC
PolarityN-CHANNEL
Power530mW
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Technical Specifications
NXP PMR400UN,115 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.85mm |
| Input Capacitance | 43pF |
| Lead Free | Lead Free |
| Length | 1.8mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 530mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 530mW |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 4ns |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMR400UN,115 Datasheet
Download the complete datasheet for NXP PMR400UN,115 to view detailed technical specifications.
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