N-channel power MOSFET in SOT-23 package, featuring 30V drain-source breakdown voltage and 2.5A continuous drain current. Offers low 117mΩ drain-source resistance (Rds On Max) and 830mW maximum power dissipation. Operates with a 2V threshold voltage and includes fast switching characteristics with 4ns turn-on delay and 7.5ns fall time. This surface-mount component is RoHS compliant and designed for tape and reel packaging.
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NXP PMV117EN,215 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 117mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 37V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 147pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 117mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 4ns |
| Width | 1.4mm |
| RoHS | Compliant |
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