PMV117EN,215

N-CH MOSFET, 30V, 2.5A, 117mR, SOT-23, SMD

N-channel power MOSFET in SOT-23 package, featuring 30V drain-source breakdown voltage and 2.5A continuous drain current. Offers low 117mΩ drain-source resistance (Rds On Max) and 830mW maximum power dissipation. Operates with a 2V threshold voltage and includes fast switching characteristics with 4ns turn-on delay and 7.5ns fall time. This surface-mount component is RoHS compliant and designed for tape and reel packaging.

PackageSOT-23

MountingSurface Mount

PolarityN-CHANNEL

Power830mW

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Technical Specifications

NXP PMV117EN,215 technical specifications.

General

Package/Case	SOT-23
Continuous Drain Current (ID)	2.5A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	117mR
Drain to Source Voltage (Vdss)	30V
Dual Supply Voltage	37V
Fall Time	7.5ns
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	147pF
Lead Free	Lead Free
Length	3mm
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	830mW
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	830mW
Radiation Hardening	No
Rds On Max	117mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	TrenchMOS™
Termination	SMD/SMT
Threshold Voltage	2V
Turn-Off Delay Time	18ns
Turn-On Delay Time	4ns
Width	1.4mm