N-channel small signal MOSFET in a SOT package, featuring a 20V drain-source breakdown voltage and a maximum continuous drain current of 5.8A. Offers a low drain-source on-resistance of 18mR (max) and 15mR (typical). Operates within a temperature range of -55°C to 150°C with a power dissipation of 510mW. Includes fast switching characteristics with a turn-on delay of 12ns and a fall time of 85ns. Lead-free and RoHS compliant.
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NXP PMV16UN,215 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 18MR |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 510mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 510mW |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
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