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Technical Specifications
NXP PMV22EN215 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 510mW |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 4ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMV22EN215 Datasheet
Download the complete datasheet for NXP PMV22EN215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.