N-channel TrenchMOS™ MOSFET in SOT package, featuring 20V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current of 5.9A. Offers a low Drain-source On Resistance (Rds On) of 37mR at a nominal Vgs of 1.5V. This component boasts fast switching speeds with a turn-on delay time of 10ns and a fall time of 12ns. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 2W.
PackageSOT
PolarityN-CHANNEL
Power2W
Quick Jump:
Technical Specifications
NXP PMV31XN215 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 37MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 410pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | 1.5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMV31XN215 Datasheet
Download the complete datasheet for NXP PMV31XN215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
