N-channel MOSFET for surface mount applications, featuring a 30V drain-source breakdown voltage and a continuous drain current of 4.7A. This component offers a low drain-source on-resistance of 55mΩ, with fast switching characteristics including a 5.5ns fall time. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. Packaged in a TO-236AB (SOT-23) case, this RoHS compliant device is supplied on tape and reel.
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NXP PMV60EN,215 technical specifications.
| Package/Case | TO-236AB |
| Continuous Drain Current (ID) | 4.7A |
| Current | 47A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 55MR |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 5ns |
| Voltage | 30V |
| Width | 1.4mm |
| RoHS | Compliant |
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