The PSMN005-55B,118 is a surface mount N-CHANNEL TrenchMOS MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 230W and a continuous drain current of 75A. The device features a drain to source breakdown voltage of 55V and a drain to source resistance of 5.8mΩ. It is lead free and RoHS compliant.
Sign in to ask questions about the NXP PSMN005-55B,118 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP PSMN005-55B,118 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 5.8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 235ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 6.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 5.8mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 420ns |
| Turn-On Delay Time | 45ns |
| RoHS | Compliant |
Download the complete datasheet for NXP PSMN005-55B,118 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
