The PSMN009-100W is a high-power N-channel MOSFET from NXP, featuring a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 100A and a maximum power dissipation of 300W. The device is packaged in a TO-247 case and is lead-free. The PSMN009-100W is RoHS compliant and suitable for high-current applications.
NXP PSMN009-100W technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 100A |
| Current Rating | 100A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9mR |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 260ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
No datasheet is available for this part.
