The PSMN015-100B,118 is a high-power N-CHANNEL TrenchMOS MOSFET from NXP, featuring a maximum drain to source breakdown voltage of 100V and a continuous drain current of 75A. It operates within a temperature range of -55°C to 175°C and is packaged in a lead-free SOT-3 package. The device is RoHS compliant and suitable for applications requiring high power dissipation, up to 300W. The PSMN015-100B,118 is designed for use in a variety of electronic circuits, including power supplies and motor control systems.
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NXP PSMN015-100B,118 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.9nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
Download the complete datasheet for NXP PSMN015-100B,118 to view detailed technical specifications.
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