The PSMN030-150P,127 is a N-CHANNEL TrenchMOS MOSFET with a maximum drain to source breakdown voltage of 150V and a continuous drain current of 55.5A. It has a maximum power dissipation of 250W and a maximum operating temperature of 175°C. The device is packaged in a SOT-3 flange mount package and is lead free and RoHS compliant.
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NXP PSMN030-150P,127 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 55.5A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 76ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.68nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 97ns |
| RoHS | Compliant |
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