N-channel TrenchMOS SiliconMAX standard level FET in a D2PAK 3-Pin package. Features 150V drain-source breakdown voltage and 35mΩ maximum drain-source on-resistance. Supports a continuous drain current of 50A with a maximum power dissipation of 250W. Operates across a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 25ns and fall time of 93ns. RoHS compliant and lead-free.
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NXP PSMN035-150B,118 technical specifications.
| Package/Case | SOT |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 35MR |
| Fall Time | 93ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.72nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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