The PSMN057-200P is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 200V and a continuous drain current of 39A. It features a power dissipation of 250W and a maximum operating temperature of 175°C. The device is packaged in a TO-220AB package and is RoHS compliant. It has a gate to source voltage of 20V and an input capacitance of 3.75nF.
PackageTO-220AB
Current Rating39A
PolarityN-CHANNEL
Power250W
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Technical Specifications
NXP PSMN057-200P technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 39A |
| Current Rating | 39A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 57mR |
| Fall Time | 78ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.75nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 105ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN057-200P Datasheet
Download the complete datasheet for NXP PSMN057-200P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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