N-channel MOSFET featuring 30 V drain-source voltage and an ultra-low 1.0 mΩ on-resistance. Delivers a continuous drain current of 300 A, optimized for high-power applications. Logic-level gate drive enables direct interface with microcontrollers. Encased in a compact LFPAK56 package with 4 pins, utilizing advanced NextPowerS3 technology for enhanced performance.
Quick Jump:
Technical Specifications
NXP PSMN1R0-30YLDX technical specifications.
General
Pin Count
4
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
NXP PSMN1R0-30YLDX Datasheet
Download the complete datasheet for NXP PSMN1R0-30YLDX to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.