NXP PSMN4R0-40YS MOSFET Transistor, N Channel, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
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NXP PSMN4R0-40YS technical specifications.
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 2.41nF |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 106W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Power Dissipation | 106W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 18ns |
| Width | 4.1mm |
| RoHS | Compliant |
No datasheet is available for this part.
