N-channel MOSFET, 100 V drain-source voltage, 4.8 mΩ on-resistance. Standard level gate, designed for high-efficiency power switching applications. Features a 3-pin D2PAK package for robust thermal performance and easy surface-mount integration.
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NXP PSMN4R8-100BSEJ technical specifications.
| Pin Count | 3 |
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
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