N-channel MOSFET, 100 V drain-source voltage, 4.8 mΩ on-resistance. Standard level gate, designed for high-efficiency power switching applications. Features a 3-pin D2PAK package for robust thermal performance and easy surface-mount integration.
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Technical Specifications
NXP PSMN4R8-100BSEJ technical specifications.
General
Pin Count
3
Compliance
RoHS
Yes
REACH
not_compliant
Military Spec
False
Datasheet
NXP PSMN4R8-100BSEJ Datasheet
Download the complete datasheet for NXP PSMN4R8-100BSEJ to view detailed technical specifications.
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