The NXP PUMB17 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100A. It is packaged in a small SOT-363 plastic package suitable for surface mount technology. The transistor has a minimum current gain (hFE) of 60 and a maximum power dissipation of 300mW. It is compliant with RoHS regulations but not SVHC compliant.
PackageSOT-363
PolarityPNP
Quick Jump:
Technical Specifications
NXP PUMB17 technical specifications.
General
| Package/Case | SOT-363 |
| Collector Emitter Breakdown Voltage | 50V |
| hFE Min | 60 |
| Max Collector Current | 100A |
| Max Power Dissipation | 300mW |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
Compliance
| RoHS | Compliant |
Datasheet
NXP PUMB17 Datasheet
Download the complete datasheet for NXP PUMB17 to view detailed technical specifications.
No datasheet is available for this part.