The PUMD12,135 is a dual bipolar junction transistor from NXP, featuring a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 300mW. The device is packaged in a TSSOP package and is available in quantities of 10,000 per reel. The PUMD12,135 is RoHS compliant and suitable for surface mount applications.
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NXP PUMD12,135 technical specifications.
| Package/Case | TSSOP |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Element Configuration | Dual |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP PUMD12,135 to view detailed technical specifications.
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