NXP SI4410DY/T3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
| RoHS | Compliant |
Download the complete datasheet for NXP SI4410DY/T3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
