The SI4410DY/T3 is a N-Channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 10A. It has a drain to source resistance of 20mR and a power dissipation of 2.5W. The device is packaged in a SO-8 package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a fall time of 30ns and a turn-off delay time of 70ns.
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NXP SI4410DY/T3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
| RoHS | Compliant |
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