Through-hole mounted phototransistor optical sensor with a 30V collector-emitter breakdown voltage and 50mA forward current. Features a 20mA maximum collector current, 4µs fall and response times, and operates within a -25°C to 85°C temperature range. Emits at an 850nm wavelength with 100mW power dissipation. RoHS compliant.
MountingThrough Hole
Power100mW
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Technical Specifications
Omron EE-SJ5-B technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 4us |
| Forward Current | 50mA |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 100 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reach SVHC Compliant | Unknown |
| Response Time | 4us |
| Reverse Breakdown Voltage | 4V |
| Reverse Voltage (DC) | 4V |
| RoHS Compliant | Yes |
| Wavelength | 850nm |
| Width | 500um |
Compliance
| RoHS | Compliant |
Datasheet
Omron EE-SJ5-B Datasheet
Download the complete datasheet for Omron EE-SJ5-B to view detailed technical specifications.
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