Through-hole mounted phototransistor optical sensor with a 30V collector-emitter breakdown voltage and 50mA forward current. Features a 20mA maximum collector current, 4µs fall and response times, and operates within a -25°C to 85°C temperature range. Emits at an 850nm wavelength with 100mW power dissipation. RoHS compliant.
MountingThrough Hole
Power100mW
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Technical Specifications
Omron EE-SJ5-B technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
4us
Forward Current
50mA
Max Collector Current
20mA
Max Operating Temperature
85°C
Min Operating Temperature
-25°C
Mount
Through Hole
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
100
Packaging
Bulk
Power Dissipation
100mW
Reach SVHC Compliant
Unknown
Response Time
4us
Reverse Breakdown Voltage
4V
Reverse Voltage (DC)
4V
RoHS Compliant
Yes
Wavelength
850nm
Width
500um
Compliance
RoHS
Compliant
Datasheet
Omron EE-SJ5-B Datasheet
Download the complete datasheet for Omron EE-SJ5-B to view detailed technical specifications.
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