PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi 1HN04CH-TL-W technical specifications.
General
| Package/Case | TO-236-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 270mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 39ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 15pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 1HN04CH-TL-W Datasheet
Download the complete datasheet for Onsemi 1HN04CH-TL-W to view detailed technical specifications.
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