This silicon high-conductance fast switching diode is supplied in a DO-35 axial-lead package. It is rated for 100 V repetitive reverse voltage and 300 mA average rectified forward current, with 500 mW power dissipation. The device provides approximately 4 ns reverse recovery time, about 4 pF capacitance, and low reverse leakage around 5 µA at 75 V. It is specified for junction temperatures from -55 °C to +175 °C and is offered in FNFLD standard packaging of 5000 units.
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| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Power Dissipation-Max | 0.5 |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
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