General purpose rectifier diode with a 3A average rectified current and a 200V maximum repetitive reverse voltage. Features a 3A forward current, 200A maximum surge current, and 6.25W power dissipation. This single-element silicon rectifier is housed in a DO-201AD package with axial leads and tin terminal finish, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C.
PackageDO-201AD
Capacitance30pF
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi 1N5402 technical specifications.
General
Application(s)
GENERAL PURPOSE
Average Rectified Current
3A
Capacitance
30pF
Case Connection
Isolated
Package/Case
DO-201AD
Current Rating
3A
Diameter
5.6mm
Diode Element Material
SILICON
Diode Type
RECTIFIER
Element Configuration
Single
Forward Current
3A
JEDEC-95 Code
DO-201AD
JESD-30 Code
O-PALF-W2
Lead Free
Lead Free
Length
9.5mm
Max Forward Surge Current (Ifsm)
200A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Max Repetitive Reverse Voltage (Vrrm)
200V
Max Reverse Current
5uA
Max Reverse Voltage (DC)
200V
Max Surge Current
200A
Mount
Through Hole
Number of Elements
1
Number of Phases
1
Output Current
3A
Package Body Material
Plastic
Package Quantity
500
Package Shape
Round
Packaging
Cut Tape
Peak Non-Repetitive Surge Current
200A
Polarity
Standard
Power Dissipation
6.25W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Voltage
200V
RoHS Compliant
Yes
Surface Mount
No
Terminal Finish
Tin
Terminal Form
Wire
Terminal Position
AXIAL
DC Rated Voltage
200V
Weight
0.36g
Compliance
RoHS
Compliant
Datasheet
Onsemi 1N5402 Datasheet
Download the complete datasheet for Onsemi 1N5402 to view detailed technical specifications.
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