The 1N6382 is a bidirectional transient voltage suppressor diode with a maximum reverse voltage of 8V and a minimum breakdown voltage of 9.4V. It has a maximum non-repetitive peak reverse power dissipation of 1500mW and a maximum clamping voltage of 11.6V. The diode is made of silicon and has a power dissipation maximum of 5W. It is available in a 2-pin axial package type O-PALF-W2.
PolarityBIDIRECTIONAL
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Technical Specifications
Onsemi 1N6382 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 8 |
| Breakdown Voltage-Min | 9.4 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Clamping Voltage-Max | 11.6 |
| Power Dissipation-Max | 5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi 1N6382 Datasheet
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